1 AM2306N analog power november, 2003 - rev. a preliminary publication order number: ds-am2306_g these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. v ds (v) r ds(on) m( ? )i d (a) 58 @ v gs = 10v 3.5 82 @ v gs = 4.5v 3.0 product summary 30 n-channel 30-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? miniature sot-23 surface mount package saves board space ? high power and current handling capability ? low side high current dc-dc converter applications notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol limit units v ds 30 v gs 20 t a =25 o c3.5 t a =70 o c2.8 i dm 16 i s 1.25 a t a =25 o c1.3 t a =70 o c0.8 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol maximum units t <= 10 sec 100 o c/ w steady-state 166 o c/w thermal resistance ratings parame te r maximum junction-to-ambient a r ja d s g
2 AM2306N analog power november, 2003 - rev. a preliminary publication order number: ds-am2306_g notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without further notic e to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in apl data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal inju ry or death may occur. should buyer purchase or use apl products for any such uninte nded or unauthorized application, buyer shall indemnify and hold a pl and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that apl was negligent regarding the design or m anufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs ( th ) v ds = v gs , i d = 250 ua 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 24 v, v gs = 0 v 1 v ds = 24 v, v gs = 0 v, t j = 55 o c 25 on-state drain current a i d ( on ) v ds = 5 v, v gs = 10 v 6 a v gs = 10 v, i d = 3.5 a 58 v gs = 4.5 v, i d = 3 a 82 forward tranconductance a g fs v ds = 15 v, i d = 3.5 a 6.9 s diode forward voltage v sd i s = 2.3 a, v gs = 0 v 0.8 v total gate charge q g 2.2 gate-source charge q g s 0.5 gate-drain charge q gd 0.8 turn-on delay time t d ( on ) 16 rise time t r 5 turn-off delay time t d ( off ) 23 fall-time t f 3 drain-source on-resistance a r ds(on) m ? parameter limits unit v dd = 25 v, r l = 25 ? , i d = 1 a, v gen = 10 v ns v ds = 15 v, v gs = 4.5 v, i d = 3.5 a nc dynamic b ua i dss zero gate voltage drain current static test conditions symbol
3 AM2306N analog power november, 2003 - rev. a preliminary publication order number: ds-am2306_g 0 5 10 15 20 25 30 0.5 1.5 2.5 3.5 4.5 vgs, gate to source voltage (v) id, drain current (a) ta = -55 o c 25 o c 125 o c vds = 5v typical electrical characteristics (n-channel) 0.6 0.8 1. 0 1. 2 1. 4 1. 6 -50-25 0 2550 75100125150 t j C juncation temp erature ( ) normalized r ds (on) v gs = 10v i d = 7a figure 1. on-region characteristics figure 2. body diode forward voltage variation with source current and temperature figure 6. on-resistance variation with temperature figure 5. gate charge characteristics figure 4. capacitance characteristics figure 3. on resistance vs vgs voltage 0 10 20 30 40 012345 v ds , drain-source voltage (v) i d , drain current (a 4.0v 3.0v v gs = 10v 5.0v 6.0v 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30 i d , drain current (a) r ds(on) , normalized drain - source on - resistanc v gs = 10v 4.5v 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf c iss c rss c oss f = 1mhz v gs = 0 v 0 2 4 6 8 10 012345 qg, gate charge (nc) vgs voltage ( v )
4 AM2306N analog power november, 2003 - rev. a preliminary publication order number: ds-am2306_g 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 vsd, body diode forward voltage (v) is, reverse drain current (a ) ta = 125 o c 25 o c vgs = 0v 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 ta, ambient temperature (oc) -vth, gate-source thresthol d voltage (v) vds = vgs id = -250ma 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, time (sec) p(pk), peak transient power (w) single pulse rqja = 125oc/w ta = 25oc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, tim e (s e c ) single p ulse 0.01 0.02 0.0 0.1 0.2 d = 0.5 rqj a (t) = r(t) + rqja rqja = 125 o c/w t j - t a = p * r q j a(t) duty cycle, d = t1 / t2 p(pk) t1 t2 typical electrical characteristics (n-channel) figure 11. transient thermal response curve figure 10. single pulse maximum power dissipation figure 9. vth gate to source voltage vs temperature figure 7. transfer characteristics figure 8. on-resistance with ga te to source voltage normalized thermal transien t junction to ambient 0 0.02 0.04 0.06 0.08 0.1 246810 v gs , gate to source voltage (v) r d s (o n ) , o n -r e si s tan c e (o h m ) t a = 25 o c
5 AM2306N analog power november, 2003 - rev. a preliminary publication order number: ds-am2306_g package information
6 AM2306N analog power november, 2003 - rev. a preliminary publication order number: ds-am2306_g ordering information ? AM2306N-t1-xx ?a: analog power ? m: mosfet ? 2306: part number ? n: n-channel ? t1: tape & reel ? xx: blank: standard pf: leadfree
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